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 T-1 3/4 PACKAGE PIN PHOTODIODE
Description
The MID-86416 is a photodiode mounted in water clear end look plastic package and suitable for the variety wavelength.
5.00 (.200)
MID-86416
Package Dimensions
Unit: mm ( inches )
5.45 (.215)
4.30 (.170)
5.80 (.228) 1.00 (.040) FLAT DENOTES CATHODE
SEE NOTE 2
Features
l l l l l l
23.50 MIN. (.920) 0.50 TYP. (.020)
High photo sensitivity Low junction capacitance High cut-off frequency Fast switching time Acceptance viwe angle : 130 Chip size : 64mil x 64mil
1.00 MIN. (.040) 2.54 NOM. (.100) SEE NOTE 3
A
C
Notes : 1. Tolerance is 0.25 mm (.010") unless otherwise noted. 2. Protruded resin under flange is 1.0 mm (.040") max. 3. Lead spacing is measured where the leads emerge from the package.
Absolute Maximum Ratings
@ TA=25oC Parameter Power Dissipation Operating Temperature Range Storage Temperature Range Lead Soldering Temperature Maximum Rating 150
o o o o
Unit mW
-55 C to + 100 C -55 C to + 100 C 260oC for 5 seconds
Unity Opto Technology Co., Ltd.
02/04/2002
MID-86416
Optical-Electrical Characteristics
@ TA=25oC Parameter Reverse Break Down Voltage Reverse Dark Current Open Circuit Voltage Rise Time Fall Time Light Current Total Capacitance Test Conditions IR=100A Ee=0 VR=10V Ee=0 =850nm Ee=0.1mW/cm RL=1K VR =5V , =850nm Ee=0.1mW/cm2 VR =3V , f=1MHZ Ee=0
2
Symbol V(BR)R ID VOC Tr Tf IL CT
Min. 30
Type .
Max.
Unit V
30 350 30 40 3 17
nA mV nsec A pF
VR =10V,=850nm
Typical Optical-Electrical Characteristic Curves
4000 100 80 60 40 20 0 0 5 10 15 20 0.01 0.1 1 10 100
3000
2000
1000
0
Reverse Volatage - VR FIG.1 DARK CURRENT VS REVERSE VOLTAGE o 2 TA=25 C, Ee=0 mW/cm
200
Reverse Voltage- VR FIG.2 CAPACITANCE VS. REVERSE VOLTAGE 2 F=1MHZ, Ee=0mW/cm
1000
Total Power Dissipation mW
150
Dark Current IR - nA
Capacitance C - pF
0 20 40 60 80 100
Dark Current - pA
100
100
10
50
1
0
0.1
o
Ambient Temperature - C FIG.3 TOTAL POWER DISSIPATION VS. AMBIENT TEMPERATURE
Ambient Temperature -oC FIG.4 DARK CURRENT VS AMBIENT TEMPERATURE VR=10, Ee=0 mw/cm
2
0
20
40
60
80
100
Unity Opto Technology Co., Ltd.
02/04/2002
MID-86416
Typical Optical-Electrical Characteristic Curves
Relative Spectral Sensitivity
100 80 60 40 20 0 400 600 800 1000 1200 1000
Ip - A Photocurrnet
@ 100 10
1
0.1 0.01
0.1
1
10
Wavelength-nm FIG.5 RELATIVE SPECTRAL SENSITIVITY VS. WAVELENGTH
0 10 20 30 40 1.0 0.9 0.8 50 60 70 80 90 0.5 0.3 0.1 0.2 0.4 0.6
Irradiance Ee (mW/cm2) FIG.6 PHOTOCURRENT VS. IRRADIANCE = 850 nm
Relative Sensitivity
FIG .7 SENSITIVITY DIAGRAM
Unity Opto Technology Co., Ltd.
02/04/2002


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